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| GL4100 GL4100 s Features 1. Compact flat package 2. Wide beam angle Side View and Thin Flat Type Infrared Emitting Diode s Outline Dimensions 3.0 2 - C0.5 Rugged resin Gate burr Detector center (Unit : mm) 1.8 0.7 Pale red transparent epoxy resin 0.3MAX. (Half intensity angle : 90 ) 0.7 1.4 4 4.0 4 0.1MAX. 2 0.9MAX. s Applications 1. Mouses 2. Track balls (1.7 ) 17.5 + 15 - 10 Rugged resin 0.2 MAX. 0.5MIN. 2 - 0.45 + 0.3 - 0.1 1 2 1.4 4 4 0.15 2 - 4 + 0.3 - 0.1 1 (2.54 ) 6 6 2.8 6 6 1 Anode 2 Cathode * ( ) : Reference dimensions * Tolerance : 0.2 mm s Absolute Maximum Ratings Parameter Forward current *1 Peak forward current Reverse voltage Power dissipation Operating temperatur Storage temperature *2 Soldering temperature Symbol IF IFM VR P Topr Tstg Tsol Rating 50 1 6 75 - 25 to + 85 - 40 to + 85 260 (Ta=25C) Unit mA A V mW C C C Soldering area * 1 Pulse width <=100 s, Duty ratio=0.01 * 2 For 5 seconds at the position of 1.4 mm from the resin edge " In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device." 1.4mm GL4100 s Electro-optical Characteristics Parameter Forward voltage Peak forward voltage Reverse current Radiant flux Peak emission wavelength Half intensity wavelength Terminal capacitance Response frequency Half intensity angle Symbol VF V FM IR e p Ct fc Conditions IF = 20mA IFM = 0.5A VR = 3V IF = 20mA IF = 5mA IF = 5mA VR = 0, f = 1MH Z IF = 20mA MIN. 1.0 TYP. 1.2 3.0 950 45 50 300 90 MAX. 1.4 4.0 10 2.0 (Ta=25 C ) Unit V V A mW nm nm pF kH Z Fig. 1 Forward Current vs. Ambient Temperature 60 Fig. 2 Peak Forward Current vs. Duty Ratio Pulse width <=100 s Ta= 25C Forward current I F (mA) (mA) Peak forward current I 0 25 50 75 85 100 FM 50 40 1000 30 100 20 10 10 0 - 25 1 10 - 4 10 - 3 10 - 2 10 - 1 1 Ambient temperature Ta (C ) Duty ratio GL4100 Fig. 3 Spectral Distribution 100 IF = 5mA Ta= 25C Fig. 4 Peak Emission Wavelength vs. Ambient Temperature 1000 I F = const. Relative radiant intensity (%) 80 Peak emission wavelength p (nm) 975 60 950 40 925 20 0 880 900 920 940 960 980 1000 1020 1040 900 - 25 0 25 50 75 a (C) 100 Wavelength (nm) Ambient temperature T Fig. 5 Forward Current vs. Forward Voltage 500 Ta= 75C 200 50C Fig. 6 Relative Radiant Flux vs. Ambient Temperature 20 IF = const. (mA) Relative radiant flux 3.0 100 50 20 10 5 2 25C 0C - 20C 10 5 2 1 0.5 0.2 Forward current I F 1 0 0.5 1.0 1.5 2.0 2.5 F 3.5 0.1 - 25 0 25 50 75 100 Forward voltage V (V) Ambient temperature Ta (C) Fig. 7 Radiant Flux vs. Forward Current 10 5 2 Ta = 25C Fig. 8 Relative Radiant Intensity vs. Distance 100 Ta = 25C 1 0.5 0.2 0.1 0.05 0.02 0.01 1 10 100 1000 DC Pulse (pulse width <=100 s) Relative radiant intensity (%) Radiant flux e ( mW) 10 1 0.1 0.1 1 10 100 Forward current I F ( mA) Distance to detector d (mm) GL4100 Fig. 9 Relative Radiant Intensity vs. Distance (Detector : PT4110) 100 Ta=25C - 30 Fig. 10 Radiation Diagram - 20 - 10 0 200 180 160 140 120 100 80 60 40 20 0 10 (Ta=25C) 20 30 Relative radiant intensity (%) 10 - 40 1 - 50 - 60 0.1 - 70 - 80 0.01 0.1 1 10 100 - 90 Relative radiant intensity (%) 40 50 60 70 80 90 Distance to detector d (mm) Angular displacement q Please refer to the chapter "Precautions for Use". (Page 78 to 93) |
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